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july 2012 ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 FR014H5JZ ? high side reverse bias / reverse polarity protector with integrated over voltage transient suppression FR014H5JZ (14m ? , -30v) high-side reverse bias / reve rse polarity protector with integrated over voltage transient suppression features ? up to -30v reverse-bias protection ? nano seconds of reverse-bias blocking response time ? +32v 24-hour ?withstand? rating ? 14m ? typical series resistance at 5v ? integrated tvs over voltage suppression ? mlp 3.3x3.3 package size ? rohs compliant ? usb tested and compatible applications ? usb 1.0, 2.0 and 3.0 devices ? usb charging ? mobile devices ? mobile medical ? pos systems ? toys ? any dc barrel jack powered device ? any dc devices subject to negative hot plug or inductive transients ? automotive peripherals description reverse bias is an increasingly common fault event that may be generated by user er ror, improperly installed batteries, automotive environments, erroneous connections to third-party chargers, negative ?hot plug? transients, inductive transi ents, and readily available negatively biased rouge usb chargers. fairchild circuit protection is proud to offer a new type of reverse bias protection devices. the fr devices are low resistance, series switches that, in the event of a reverse bias condition, shut off power and block the negative voltage to help protect downstream circuits. the fr devices are optimized for the application to offer best in class reverse bias protection and voltage capabilities while minimizing size, series voltage drop, and normal operating power consumption. in the event of a reverse bias application, FR014H5JZ devices effectively provide a full voltage block and can easily protect -0.3v rated silicon. from a power perspective, in normal bias, a 14m ? fr device in a 1.5a application will generate only 21mv of voltage drop or 32mw of power loss. in reverse bias, fr devices dissipate less then 20w in a 16v reverse bias event. this type of performance is not possible with a diode solution. benefits extend beyond the device. due to low power dissipation, not only is the device small, but heat sinking requirements and cost can be minimized as well. ordering information part number top mark package packing method FR014H5JZ 14h 8-lead, molded leadless package (mlp), dual, 3.3mm square 3000 on tape & reel; 13-inch reel, 12mm tape
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 2 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression diagrams ctl neg pos startup ? diode inrush ? reducer ov ? bypass ? protection power switch usb ? device circuit power ? source (usb ? connector) ? FR014H5JZ neg pos ctl v in protected ? usb ? device ? circuit i in figure 1. block diagram figure 2. typical schematic pin configuration figure 3. pin assignments pin definitions name pin description pos 5, 6, 7, 8 the positive terminal of the power source. cu rrent flows into this pin during normal operation. ctl 4 the control pin of the device. a negative voltage to the pos pin turns the switch on and a positive voltage turns the switch to a high-impedance state. neg 1, 2, 3 the positive terminal of the load circuit to be protected. current flows out of this pin during normal operation.
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 3 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression absolute maximum ratings values are at t a =25 c unless otherwise noted. symbol parameter values unit v+ max_op steady-state normal operating voltage between pos and ctl pins (v in = v+ max_op , i in = 1.5a, switch on) +25 v v+ 24 24-hour normal operating voltage withstand capability between pos and ctl pins (v in = v+ 24 , i in = 1.5a, switch on) (1) +32 v- max_op steady-state reverse bias standoff voltage between pos and ctl pins (v in = v- max_op ) -30 i in input current continuous (2) (see figure 4) 9 a t j operating junction temperature 150 c p d power dissipation t c = 25c 36 w t a = 25c (2) (see figure 4) 2.3 i diode_cont steady-state diode continuous forw ard current from pos to neg (2) (see figure 4) 2 a i diode_pulse pulsed diode forward current from pos to neg (300s pulse) (2) (see figure 5) 450 esd electrostatic discharge capability human body model, jesd22-a114 8 kv charged device model, jesd22-c101 2 system model, iec61000-4-2 neg is shorted to ctl and connected to gnd contact 8 air 15 no external connection between neg and ctl contact 3 air 4 notes: 1. the v +24 rating is not a survival guarantee. it is a statisti cally calculated survivability reference point taken on qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. it is intended to indicate the device?s ability to withstand transient events that exceed the recommended operating voltage rating. specification is bas ed on qualification devices tested using accelerated destructive testing at higher voltages, as well as production pulse testing at the v +24 level. production device field life results may vary. results are also subject to vari ation based on implementation, environ mental considerations, and circuit dynamics. systems should never be designed wi th the intent to normally operate at v +24 levels. contact fairchild semiconductor for additional information. 2. the device power dissipation and thermal resistance (r ) are characterized with device mounted on the following fr4 printed circuit boards, as shown in figure 4 and figure 5 figure 4. 1 square inch of 2-ounce copper figure 5. minimum pads of 2-ounce copper thermal characteristics symbol parameter value unit r jc thermal resistance, junction to case 3.4 c/w r ja thermal resistance, junction to ambient (2) (see figure 4) 50
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 4 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter conditions min. typ. max. unit positive bias characteristics r on device resistance, switch on v in = +4v, i in = 1.5a 18 23 m ? v in = +5v, i in = 1.5a 14 19 v in = +5v, i in = 1.5a, t j = 125c 20 v in = +12v, i in = 1.5a 11 14 v on input voltage, v in , at which voltage at pos, v pos , reaches a certain level at given current i in = 100ma, v pos - v neg = 50mv, v ctl = 0v 2.0 2.4 3.0 v ? v on / ? t j temperature coefficient of v on -3.52 mv/c v f diode forward voltage v ctl = v neg , i diode = 0.1a, pulse width < 300s 0.57 0.63 0.70 v i bias bias current flowing into pos pin during normal bias operation v pos = 5v, v ctl = 0v, no load 30 na negative bias characteristics v- max_op reverse bias breakdown voltage i in = -250a, v ctl = v neg =0v -30 v ? v- max_op / ? t j reverse bias breakdown voltage temperature coefficient 22.5 mv/c i- leakage current from neg to pos in reverse-bias condition v pos = -20v, v ctl = v neg = 0v 1 a t rn time to respond to negative bias condition v ctl = 5v, v pos = 0v, c load = 10f, reverse bias startup inrush current = 0.2a 50 ns integrated tvs performance v z breakdown voltage @ i t i t = 1ma, 300s pulse 28.5 30 31.2 v i r leakage current from neg to ctl v neg = +25v, v ctl = 0v 1.5 10 a v neg = -25v, v ctl = 0v -1.5 -10 i ppm max pulse current from neg to ctl iec61000-4-5 8x20 s pulse v neg > v ctl 0.8 a v neg < v ctl -0.9 v c clamping voltage form neg to ctl at i ppm v neg > v ctl 34 v v neg < v ctl -34 dynamic characteristics c i input capacitance between pos and ctl v in = -5v, v ctl = v neg = 0v, f = 1mhz 2440 pf c s switch capacitance between pos and neg 564 c o output capacitance between neg and ctl 2526 r c control internal resistance 3.6 ?
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 5 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression typical characteristics t j = 25c unless otherwise specified. 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 16v 12v 9v 5v r on , switch on-resistance (m ? ) i in , input current (a) input voltage, v in = 4v 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 v on , minimum input voltage turning on the switch (v) i in , input current (a) figure 6. switch on resistance vs. switch current figure 7. minimum input voltage to turn on switch vs. current at 50mv switch voltage drop 1 3 5 7 9 11 13 15 17 19 21 0.0 0.2 0.4 0.6 0.8 1.0 1.5a 0.9a t j = 25 o c r sw , effective switch resistance ( ? ) v in , input voltage (v) i in = 0.1a -75 -50 -25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 i in = 0.1a 12v r on , switch on-resistance (m ? ) t j , junction temperature ( o c) v in = 5v figure 8. effective switch resistance r sw vs. input voltage v in figure 9. switch on resistance vs. junction temperature at 0.1a -75 -50 -25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 i in = 1.5a 12v r on , switch on-resistance (m ? ) t j , junction temperature ( o c) v in = 5v 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 peak package power (w) t, pulse width (s) figure 10. switch on resistance vs. junction temperature at 1.5a figure 11. single-pulse maximum power vs. time
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 6 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression typical characteristics t j = 25c unless otherwise specified. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1e-3 0.01 0.1 1 10 100 -55 o c 25 o c t j = 125 o c i f , startup diode forward current (a) v f , startup diode forward voltage (v) v neg = v ctl = 0v figure 12. startup diode current vs. forward voltage
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 7 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression application test configurations usb ? device circuit power ? source (usb ? connector) ? FR014H5JZ neg pos ctl v in protected ? usb ? device ? circuit i in figure 13. typical application circuit for usb applications pulse generator dc power supply c1 c2 r1 r3 r2 q1-1 fds8858cz q1-2 fds8858cz i in FR014H5JZ neg pos ctl 4 ???? g2 1 ???? s1 3 ?? s2 5,6 d2 2 ?? g1 7,8 ?? d1 figure 14. startup test circuit ? normal bias with FR014H5JZ
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 8 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression application test configurations (continued) c1 c2 r1 r3 r2 q1-1 fds8858cz q1-2 fds8858cz dc power supply pulse generator i in FR014H5JZ neg pos ctl 4 ???? g2 1 ???? s1 3 ?? s2 5,6 ?? d2 2 ?? g1 7,8 ?? d1 figure 15. startup test circuit ? reverse bias with FR014H5JZ pulse generator dc power supply c1 c2 r1 r3 r2 q1-1 fds8858cz q1-2 fds8858cz i in 4 ???? g2 1 ???? s1 3 ?? s2 5,6 ?? d2 2 ?? g1 7,8 ?? d1 figure 16. startup test circuit ? without FR014H5JZ
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 9 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression typical application waveforms typical usb3.0 conditions. figure 17. normal bias startup waveform, dc power source=5v, c 1 =100f, c 2 =10f, r 1 =r 2 =10k ? , r 3 =27 ? figure 18. reverse bias startup waveform, dc power source=5v, c 1 =100f, c 2 =10f, r 1 =r 2 =10k ? , r 3 =27 ? v in , 2v/div. the input voltage between pos and ctl v out , 2v/div. the output voltage between neg and ctl v d , 1v/div. the startup diode voltage between pos and neg i in , 5a/div. the input current flowing from pos to neg time: 5 s/div v in , 2v/div. the input voltage between pos and ctl v d , 2v/div. the startup diode voltage between pos and neg v out , 1v/div. the output voltage between neg and ctl i in , 0.1a/div. the input current flowing into pos time: 100ns/div
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 10 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression typical application waveforms (continued) typical usb3.0 conditions. figure 19. startup waveform without FR014H5JZ, dc power source=5v, c 1 =100f, c 2 =10uf, r 1 =r 2 =10k ? , r 3 =27 ? application information figure 17 shows the voltage and current waveforms when a virtual usb3.0 device is connected to a 5v source. a usb application allows a maximum source output capacitance of c 1 = 120f and a maximum device-side input capacitance of c 2 = 10f plus a maximum load (minimum resistance) of r 3 = 27 ? . c 1 = 100f, c 2 = 10f and r 3 = 27 ? were used for testing. when the dc power source is connected to the circuit (refer to figure 13) , the built-in startup diode initially conducts the current such that the usb device powers up. due to the initial diode voltage drop, the FR014H5JZ effectively reduces the peak inrush current of a hot plug event. under these test conditions, the input inrush current reaches about 6a peak. while the current flows, the input voltage increases. the speed of this input voltage increase depends on the time constant formed by the load resistance r 3 and load capacitance c 2 . the larger the time constant, the slower the input voltage increase. as the input voltage approaches a level equal to the protector?s turn-on voltage, v on , the protector turns on and operates in low-resistance mode as defined by v in and operating current i in . in the event of a negative transient, or when the dc power source is reversely connected to the circuit, the device blocks the flow of current and holds off the voltage, thereby protecting the usb device. figure 18 shows the voltage and current waveforms when a virtual usb3.0 device is reversely biased; the output voltage is near 0 and response time is less than 50ns. figure 19 shows the voltage and current waveforms when no reverse bias protection is implemented. in figure 17, while the reverse bias protector is present, the input voltage, v in , and the output voltage, v o , are separated and look different. when this reverse bias protector is removed, v in and v o merge, as shown in figure 19 as v in . this v in is also the voltage applied to the load circuit. it can be seen that, with reverse bias protection, the voltage applied to the load and the current flowing into the load look very much the same as without reverse bias protection. benefits of reverse bias protection the most important benefit is to prevent accidently reverse-biased voltage from damaging the usb load. another benefit is that the peak startup inrush current can be reduced. how fast the input voltage rises, the input/output capacitance, the input voltage, and how heavy the load is determine how much the inrush current can be reduced. in a 5v usb application, for example, the inrush current can be 5% - 20% less with different input voltage rising rate and other factors. this can offer a system designer the option of increasing c 2 while keeping ?effective? usb device capacitance down. v in , 2v/div. the voltage applied on the load circuit i in , 2a/div. the input current time: 5 ?
FR014H5JZ ? high side reverse bias / re verse polarity protector with integrat ed over voltage transient suppression ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ rev. c1 11 physical dimensions package drawings are provided as a service to customers considering fairchild component s. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . figure 20. 8-lead, molded leadless package (mlp), 3.3mm square
? 2012 fairchild semiconductor corporation www.fairchildsemi.com FR014H5JZ ? rev. c1 12 FR014H5JZ ? high side reverse bias / reverse polarity prot ector with integrated over voltage transient suppression trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2cool ? accupower ? ax-cap ? * bitsic ? build it now ? coreplus ? corepower ? crossvolt ? ctl ? current transfer logic ? deuxpeed ? dual cool? ecospark ? efficientmax ? esbc ? ? fairchild ? fairchild semiconductor ? fact quiet series ? fact ? fast ? fastvcore ? fetbench ? flashwriter ? * fps ? f-pfs ? frfet ? global power resource sm greenbridge ? green fps ? green fps ? e-series ? g max ? gto ? intellimax ? isoplanar ? making small speakers sound louder and better? megabuck ? microcoupler ? microfet ? micropak ? micropak2 ? millerdrive ? motionmax ? motion-spm ? mwsaver ? optohit ? optologic ? optoplanar ? ? powertrench ? powerxs? programmable active droop ? qfet ? qs ? quiet series ? rapidconfigure ? ? saving our world, 1mw/w/kw at a time? signalwise ? smartmax ? smart start ? solutions for your success ? spm ? stealth ? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos ? syncfet ? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? transic ? trifault detect ? truecurrent ? * ? serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? voltageplus ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchil d is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fairchild's full rang e of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately address any warr anty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. fairchild is committed to com bat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i61

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